MII 150-12 A4
MID 150-12 A4
MDI 150-12 A4
IGBT Modules
I C25
V CES
= 180 A
= 1200 V
Short Circuit SOA Capability
Square RBSOA
V CE(sat) typ. = 2.2 V
MII
3
MID
3
MDI
3
1
2
3
11
10
9
8
8
9
1
1
8
9
1
11
10
2
11
10
2
2
E 72873
NPT IGBT technology
Symbol
Conditions
Maximum Ratings
Features
q
V CES
V CGR
V GES
V GEM
I C25
I C80
I CM
t SC
(SCSOA)
RBSOA
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GE = 20 k W
Continuous
Transient
T C = 25 ° C
T C = 80 ° C
T C = 80 ° C, t p = 1 ms
V GE = ±15 V, V CE = V CES , T J = 125 ° C
R G = 10 W , non repetitive
V GE = ±15 V, T J = 125 ° C, R G = 10 W
1200
1200
± 20
± 30
180
120
240
10
I CM = 200
V
V
V
V
A
A
A
m s
A
q
q
q
q
q
q
q
q
q
q
q
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
package with DCB ceramic base plate
isolation voltage 4800 V
UL registered E72873
Clamped inductive load, L = 100 m H
V CEK < V CES
Advantages
P tot
T J
T C = 25 ° C
760
150
W
° C
q
q
space and weight savings
reduced protection circuits
T stg
-40 ... +150
° C
V ISOL
50/60 Hz, RMS t = 1 min
I ISOL £ 1 mA t = 1 s
Insulating material: Al 2 O 3
4000
4800
V~
V~
Typical Applications
AC and DC motor control
q
M d
Mounting torque (module)
(teminals)
2.25-2.75
20-25
2.5-3.7
Nm
lb.in.
Nm
q
q
q
AC servo and robot drives
power supplies
welding inverters
22-33
lb.in.
d S
d A
a
Weight
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Typical
10
9.6
50
250
8.8
mm
mm
m/s 2
g
oz.
Data according to a single IGBT/FRED unless otherwise stated.
? 2000 IXYS All rights reserved
1-4
相关PDF资料
MII200-12A4 MOD IGBT RBSOA 1200V 270A Y3-DCB
MII300-12A4 MOD IGBT RBSOA 1200V 330A Y3-DCB
MITA15WB1200TMH MODULE IGBT CBI
MITB10WB1200TMH MODULE IGBT CBI
MITB15WB1200TMH MODULE IGBT CBI
MK-6000 KIT SURFBOARD DISCRETE 46PCS
MK-US-260 KIT UNI-SIP ASSORTMENT 52PCS
MKI100-12F8 MOD IGBT H-BRIDGE 1200V 125A E3
相关代理商/技术参数
MII200-12A4 功能描述:分立半导体模块 200 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MII206K260R00 制造商:Laird Technologies Inc 功能描述:
MII300-12A4 功能描述:分立半导体模块 IGBT MODULE 1200V,300A RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MII300-12E4 功能描述:分立半导体模块 300 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MII400-12E4 功能描述:分立半导体模块 IGBT MODULE 1200V, 400A RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MII-400GP 95MHZ2.2V 制造商:CYRIX 功能描述:
MII75-12A3 功能描述:分立半导体模块 75 Amps 1200V RoHS:否 制造商:Infineon Technologies 产品:Thyristor Power Modules 类型:Phase Controls 安装风格:Screw 封装 / 箱体:DT61 封装:
MI-IAM 制造商:VICOR 制造商全称:Vicor Corporation 功能描述:Military Input Attenuator Modules